DOI:10.5488/CMP.25.43706 arXiv:2206.01514
Title:
Phase transitions in ferroelectric domain walls
Author(s):
E. A. Eliseev
(Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Krjijanovsky 3, 03142 Kyiv, Ukraine),
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M. D. Glinchuk
(Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Krjijanovsky 3, 03142 Kyiv, Ukraine),
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L. P. Yurchenko
(Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Krjijanovsky 3, 03142 Kyiv, Ukraine),
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P. Maksymovych
(Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831),
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A. N. Morozovska
(Institute of Physics, National Academy of Sciences of Ukraine, 46, pr. Nauky, 03028 Kyiv, Ukraine)
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Despite multiple efforts, there exist many unsolved fundamental problems related with detection and analysis of internal polarization structure and related phase transitions in ferroelectric domain walls. Their solution can be very important for the progress in domain wall nanoelectronics and related applications in advanced memories and other information technologies. Here, we theoretically study the features of phase transitions in the domain walls, which are potentially detectable by the scanning probe capacitance microwave microscopy. The finite element modelling based on the Landau-Ginzburg-Devonshire theory is performed for the capacitance changes related with the domain wall motion in a multiaxial ferroelectric BaTiO3.
Key words: ferroelectrics, domain walls, local phase transition
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