TEMPERATURE-INDUCED METAL-INSULATOR TRANSITION IN A NON-SYMMETRIC HUBBARD
MODEL AT HALF-FILLING
Authors: L.Didukh, V.Hankevych (Ternopil State Technical University, Department of Physics, 56 Rus'ka Str., 282001 Ternopil, Ukraine)
In the present paper metal-to-insulator transition with the increase of temperature is studied in a narrow-band model with non-equivalent Hubbard subbands at half-filling. It is shown that the results obtained in the considered model are essentially distinct from those obtained in the Hubbard model. The results are applied to the interpretation of some experimental data.
Comments: Figs. 2, Refs. 24, Tabs. 0.
|[ps,pdf]||<< Contents of Vol.2 No.3(19)|