Condensed Matter Physics, 2000, vol. 3, No. 1(21), p. 169-174, English
DOI:10.5488/CMP.3.1.169

Title: FILLING OF ELECTRONIC STATES AND CRYSTAL LATTICE DEFORMATION AROUND DISLOCATION WALL
Author(s): R.M.Peleschak (Ivan Franko Drogobych State Pedagogical University, 24 I.Franko Str., 293720 Drogobych, Lviv Region, Ukraine)

Within the band model we study the electron redistribution around the dislocation wall depending on the conduction band filling ($0<\bar n <1$) taking into account the electron-deformation coupling. We show that as the conduction band filling $\bar n$ increases, the redistribution gets more localized around the dislocation plane. It is established that an increase of the distance between the neighbouring dislocations raises the period of changes in charge density redistribution $\Delta n$ along the dislocation wall, whereas a change in the amplitude of the electron redistribution as a function of the distance to the dislocation plane is smoother.

Comments: Figs. 1, Refs. 7, Tabs. 0.

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