PIEZOELECTRIC EFFECT IN p-Si/SiGe/(001)Si MODULATION DOPED
Author(s): V.K.Dugaev (Chernivtsi Branch of the Institute of Materials Science Problems, National Academy of Sciences of Ukraine, 5 Vilde Str., 58001 Chernivtsi, Ukraine), O.A.Mironov (Department of Physics, University of Warwick, Coventry, CV4 7AL, UK), S.V.Kosyachenko (Trade and Economy Institute of Chernivtsi, 1 Central Square, 58000 Chernivtsi, Ukraine)
We present the results of calculations of the piezoelectric effect in a Si/SiGe multilayer structure with a narrow quantum well and a wide layer of doped Si semiconductor. The proposed theory is a possible explanation of some recent experiments on these structures.
Comments: Figs. 4, Refs. 13, Tabs. 0.
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