UNBINDING OF SURFACE DEFECTS UNDER THE DEFECT-SELECTIVE ADSORPTION
Author(s): E.V.Vakarin (Laboratoire de Electrochimie et Chimie Analytique ENSCP-UPMC, 11 rue P. et M. Curie, 75231 Cedex 05, Paris, France; Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine, 1 Svientsitskii Str., 79011 Lviv, Ukraine)
Unbinding of surface topological defects in the presence of the defect-selective adsorption is investigated using a coupled Coulomb Gas -- Lattice Gas model. The unbinding temperature increases with the increasing selectivity (and coverage) for both, sign-dependent and sign-independent adsorption. In the latter case, the adsorbates tend to increase the number density of defects. The stability requirement implies that the adsorbate cluster size must be coherent with the screening length of free defects.
Key words: adsorption, selectivity, defects
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