ELECTRONIC TRANSPORT PROPERTIES OF COMPOUNDS WITH
TEMPERATURE UNSTABLE INTERMEDIATE VALENCE OF Ce
Authors: M.D.Koterlyn (Ivan Franko National University of Lviv, Dragomanova Str. 50, 79005 Lviv, Ukraine; Academy of Bydgoszcz, Sq. Weyssenhoffa 11, 85-072 Bydgoszcz, Poland), R.I.Yasnitskii, B.S.Morokhivskii (Ivan Franko National University of Lviv, Dragomanova Str. 50, 79005 Lviv, Ukraine)
Results of a thermoelectric power component (Sf) and electrical resistivity (ρf) measurements connected with the temperature unstable intermediate valence of Ce are presented for CeNi, CeNi2 and CeNi2Si2 compounds in the temperature range 4-800 K. It is shown that dependences Sf(T) and ρf(T) are well described in a wide temperature range within the framework of a simple model of a narrow peak in the density of states gf(E) of Lorentzian shape near the Fermi level. The width of the peak depends on temperature and defines the characteristic single-ion Kondo temperature TK.
Key words: rare earth compounds, valence fluctuation, electrical resistivity,
PACS: 72.20.Lp, 72.10.Fk, 75.30.Mb
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