Condensed Matter Physics, 2007, vol. 10, No. 4(52), p. 579, English
DOI:10.5488/CMP.10.4.579
Title:
Mapping between two models of etching process
Author(s):

T.Patsahan
(Institute for Condensed Matter Physics, National Academy of Sciences of Ukraine, 1 Svientsitskii str., 79011 Lviv, Ukraine)
,


A.Taleb
(aboratoire d'Electrochimie et Chimie Analytique, ENSCP et Université P. et M. Curie, UMR 7575, 4 Place Jussieu, 75005 Paris, France)
,


J.Stafiej
(Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01224 Warsaw, Poland)
,


J.P.Badiali
(aboratoire d'Electrochimie et Chimie Analytique, ENSCP et Université P. et M. Curie, UMR 7575, 4 Place Jussieu, 75005 Paris, France)

We consider two models for the etching processes using numerical simulations based on cellularautomata discretelattice approach. In the first model we use a uniform etching probability for each surface site. In the second model the etching probability at a given site depends on the local environment of this site. In contrast to the first model we have now a nonlocal description of the surface evolution. It is natural to consider the following question: is this nonlocality sufficient to induce new physics? To answer this question is the main goal of the paper. We show that there exists an equivalence between the two models. This means that the nonlocal model gives results similar to the local one provided we use an effective value of the etching probability.
Key words:
surface growth, etching, mean field description
PACS:
81.65.Cf, 05.40.a, 68.35.Ct
