Condensed Matter Physics, 2010, vol. 13, No. 1, p. 13702:112
DOI:10.5488/CMP.13.13702
Title:
Hole, impurity and exciton states in a spherical quantum dot
Author(s):

V.I. Boichuk
(Department of Theoretical Physics, Ivan Franko Drohobych State Pedagogical University, 3 Stryiska Str., 82100, Drohobych, Lviv region, Ukraine)
,


I.V. Bilynskyi
(Department of Theoretical Physics, Ivan Franko Drohobych State Pedagogical University, 3 Stryiska Str., 82100, Drohobych, Lviv region, Ukraine)
,


R.Ya. Leshko
(Department of Theoretical Physics, Ivan Franko Drohobych State Pedagogical University, 3 Stryiska Str., 82100, Drohobych, Lviv region, Ukraine)

The 3x3 kp hole Hamiltonian for
the wavefunction envelopes (effective mass Hamiltonian) was used
for calculation of discrete states of the hole and acceptor
hydrogenic impurity in a spherical Si/SiO_{2}
nanoheterostructure as a function of the quantum dot radius by
neglecting the corrugation of constantenergy surfaces. A
study was conducted in the case of finite potential well at the
separation boundary of the nanoheterosystem. The dependence of the
hole energy spectrum on polarization charges, which arise at the
separation boundary of the media, and on the dielectric
permittivity, was defined. Using the exact electron and hole
solutions, the exciton wavefunction was constructed and the exciton
groundstate energy was defined. The theoretical results have been
compared with experimental data.
Key words:
impurity, multiband model, polarization charges
PACS: 71.55.i, 73.21.La, 79.60.Jv
