Condensed Matter Physics, 2011, vol. 14, No. 2, 23602:1-11
DOI:10.5488/CMP.14.23602          arXiv:1106.6256

Title: Morphology change of the silicon surface induced by Ar+ ion beam sputtering
Author(s):
  V.O. Kharchenko (Institute of Applied Physics, National Academy of Sciences of Ukraine, 58 Petropavlivska Str., 40030 Sumy, Ukraine) ,
  D.O. Kharchenko (Institute of Applied Physics, National Academy of Sciences of Ukraine, 58 Petropavlivska Str., 40030 Sumy, Ukraine)

Two-level modeling for nanoscale pattern formation on silicon target by Ar+ ion sputtering is presented. Phase diagram illustrating possible nanosize surface patterns is discussed. Scaling characteristics for the structure wavelength dependence versus incoming ion energy are defined. Growth and roughness exponents in different domains of the phase diagram are obtained.

Key words: ion-beam sputtering, surface morphology, nanoscale structures
PACS: 68.55.-a, 68.35.Ct, 79.20.Rf, 81.16.Rf


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