Title: Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation
Author(s):

	V. Nagarajan (School of Electrical and Electronics Engineering, Shanmugha Arts Science Technology and Research Academy (SASTRA) University, Tirumalaisamudram, Thanjavur, Tamil nadu — 613 401, India) ,
	R. Chandiramouli (School of Electrical and Electronics Engineering, Shanmugha Arts Science Technology and Research Academy (SASTRA) University, Tirumalaisamudram, Thanjavur, Tamil nadu — 613 401, India)

The electronic property of NiFe₂O₄ nanowire device is investigated through nonequilibrium Green’s functions (NEGF) in combination with density functional theory (DFT). The electronic transport properties of NiFe₂O₄ nanowire are studied in terms of density of states, transmission spectrum and I–V characteristics. The density of states gets modified with the applied bias voltage across NiFe₂O₄ nanowire device, the density of charge is observed both in the valence band and in the conduction band on increasing the bias voltage. The transmission spectrum of NiFe₂O₄ nanowire device gives the insights on the transition of electrons at different energy intervals. The findings of the present work suggest that NiFe₂O₄ nanowire device can be used as negative differential resistance (NDR) device and its NDR property can be tuned with the bias voltage, which may be used in microwave device, memory devices and in fast switching devices.

Key words: nickel ferrite, nanowire, negative differential resistance, density of states, electron density
PACS: 31.10.+z, 31.25.-v, 61.46.+w, 61.66.Fn, 73.63.Rt, 85.30.-z

Full text [pdf]

<< List of papers