Condensed Matter Physics, 2017, vol. 20, No. 4, 43704

Title: Analysis of influence of the polarization traps and shallow impurities on the quantum dots interlevel light absorption
Author(s):
  V.I. Boichuk (Department of theoretical and applied physics, and computer simulation, Ivan Franko Drohobych State Pedagogical University, 3 Stryiska St., 82100 Drohobych, Lviv Region, Ukraine) ,
  R.Ya. Leshko (Department of theoretical and applied physics, and computer simulation, Ivan Franko Drohobych State Pedagogical University, 3 Stryiska St., 82100 Drohobych, Lviv Region, Ukraine) ,
  D.S. Karpyn (Department of theoretical and applied physics, and computer simulation, Ivan Franko Drohobych State Pedagogical University, 3 Stryiska St., 82100 Drohobych, Lviv Region, Ukraine)

The spherical quantum dot (QD) heterosystem CdS/SiO2 has been studied. Each QD has an hydrogen-like impurity in its center. Besides that, it has been accounted that the polarization trap for electron exist at the interfaces due to difference between the QD and matrix dielectric permitivity. It has been defined that for the small QD radiuses there are surface electron states. For different radii the partial contributions of the surface states into the electron energy, coused by the electron–ion and electron–polarization charges interaction, has been defined. The linear light absorption coefficient of the noninteraction QDs has been calculated with taking into account the QD disperssion by the size. It has been showed that surface states can be observed into different ranges of the electromagnetic spectrum.

Key words: absorption coefficient, donor impurity, polarization trap
PACS: 73.21.La, 78.20.Ci


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