Title: Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the limits of self-assembled deformation-diffusion model
Author(s):

	R.M. Peleshchak (Drohobych Ivan Franko State Pedagogical University, 24 I.Franko Str., 82100 Drohobych, Ukraine)
	N.Ya. Kulyk (Drohobych Ivan Franko State Pedagogical University, 24 I.Franko Str., 82100 Drohobych, Ukraine)
	M.V. Doroshenko (Drohobych Ivan Franko State Pedagogical University, 24 I.Franko Str., 82100 Drohobych, Ukraine)

The model of spatial-temporal distribution of point defects in a three-layer stressed nanoheterosystem GaAs/I{n_x}Ga_{1 - x}As/GaAs considering the self-assembled deformation-diffusion interaction is constructed. Within the limits of this model, the profile of spatial-temporal distribution of vacancies (interstitial atoms) in the stressed nanoheterosystem GaAs/I{n_x}Ga_{1 - x}As/GaAs is calculated. It is shown that in the case of a stationary state (t >5τ _d⁽²⁾), the concentration of vacancies in the inhomogeneous-compressed interlayer is smaller relative to the initial average value N_d0⁽²⁾ by 16%.

Key words: spatial-temporal distribution, vacancies, interstitial atoms
PACS: 67.80.Mg, 68.55.Ln

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